substrate
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade gibag-on mahimong ba customized
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SiC Ingot 4H-N type Dummy grade 2inch 3inch 4inch 6inch nga gibag-on:>10mm
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HPSI SiC wafer dia: 3inch nga gibag-on: 350um± 25 µm alang sa Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Dobleng Pinasinaw nga Conductive Prime Grade Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Gibag-on
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2inch silicon carbide substrate 6H-N double-sided gipasinaw nga diametro 50.8mm production grade research grade
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch nga may gibag-on nga 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type nga SiC wafer 4H/6H-P 3C-N 6pulgada nga gibag-on 350 μm nga adunay Primary Flat Orientation