SiC
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4H-N 8 pulgada nga SiC substrate wafer Silicon Carbide Dummy Research grado 500um gibag-on
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4H-N/6H-N SiC Wafer Reasearch produksyon Dummy grado Dia150mm Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um nga gibag-on
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HPSI SiC wafer dia: 3inch nga gibag-on: 350um± 25 µm alang sa Power Electronics
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8 pulgada nga SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade custom polished substrate
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type nga SiC substrate SiC wafer Dia2inch bag-ong produkto
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Dobleng Pinasinaw nga Conductive Prime Grade Mos Grade
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Taas nga purity Semi-Insulating ） 4H/6H-P 3C -n type 2 3 4 6 8inch available
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2 pulgada nga Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing Taas nga thermal conductivity ubos nga konsumo sa kuryente
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SiC substrate 3inch 350um gibag-on HPSI type Prime Grade Dummy nga grado
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade gibag-on mahimong ba customized